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AEGIS
SEMICONDUTORES LTDA.
A1A:100.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 180 C A1A:100.02 A1A:100.04 A1A:100.06 A1A:100.08 A1A:100.10 A1A:100.12 A1A:100.14 A1A:100.16 200 400 600 800 1000 1200 1400 1600
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Max. VRSM , VR (V) Max. nonrep. peak reverse voltage
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This datasheet applies to: Metric thread: A1A:100.XX, A1B:100.XX Inch thread: A2A:100.XX, A2B:100.XX
TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600
TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
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MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 100 125 200 1000 IFSM Max. Peak non-rep. surge current 1200 1500 1650 8050 I2t Max. I2t capability 8775 11500 12535 I2t1/2 Max. I2t1/2 capability F Mounting Force 805000 10(~89) As
2 1/2
UNITS
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NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 180 C, rated VRRM applied after surge.
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C C C
A
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IF(RMS) Nom. RMS current
A
A 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms A2s t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 180OC, no voltage applied after surge. for time tx = I t
2 1/2 2
Initial TJ = 180 C, no voltage applied after surge.
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Initial TJ = 180 C, rated VRRM applied after surge.
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Initial TJ = 180OC, no voltage applied after surge. It
*
1/2 tx .
(0.1 < tx < 10ms). -
N.m(Lbf.in)
AEGIS
SEMICONDUTORES LTDA.
A1A:100.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. ------10 --------100(3.5) MAX. UNITS 1.55 0.85 1.80 15.00 0.35 0.40 0.43 0.08 --V V mW mA
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TEST CONDITIONS Initial T J = 25 C, sinusoidal wave, Ipeak = 314A. TJ = 180 C, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. Use low values for IFM < pIF(AV) TJ = 180 OC. Max. Rated VRRM
C/W DC operation C/W 180O sine wave C/W 120 rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. ----O
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g(oz.) JEDEC
DO-205AA (DO-8)
Maximum Allowable Case Temperature
180
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120
90 30 60
Maximum Allowable Case Temperature (C)
160
140
30
120
60 90 120
110 100 90 80 0
*Sinusoidal Waveform
120 180
100
180
80 0 20 40 60 80 100 120 140 160 180
DC
20
40
60
80
100
120
140
200
*Rectangular Waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:100.XX
Maximum Average Forward Power Loss
1400
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
1000
30
Maximum Average Forward Power Loss (W)
30
1200 1000 800
60
800
600
60
600
90
90
400
120 180 DC
400 200 0 0
*Sinusoidal Waveform
120 180
200
0 0
*Rectangular Waveform
50
100
150
200
250
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5
Instantaneous Forward Current (A)
0.01
100
TJ = 125C
TJ = 25C
10 0.5 1.0
1E-3 0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:100.XX
DO-205AA (DO-8)

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